Recent Developments in Scanning Tunneling Microscopy

Recent Developments in Scanning Tunneling Spectroscopy of Semiconductor Surfaces

Several recent developments in scanning tunneling spectroscopy (STS) of semiconductor surfaces are reviewed. First, the normalization of spectra is discussed, which for the Si(111)2×1 surface is found to produce a small shift in the apparent position of band edges. With this correction, the surface band gap measured by STS is found to be in good agreement with that obtained by other experimenta...

Recent advances in atomic-scale spin-polarized scanning tunneling microscopy.

The Mn3N2 (010) surface has been studied using spin-polarized scanning tunneling microscopy at the atomic scale. The principle objective of this work is to elucidate the properties and potential of this technique to measure atomic-scale magnetic structures. The experimental approach involves the use of a combined molecular beam epitaxy/scanning tunneling microscopy system that allows the study ...

Recent advances in scanning tunneling microscopy and spectroscopy.

Microscopy, Scanning Tunneling

Ultrafast Scanning Tunneling Microscopy